rf3145 RF Micro Devices, rf3145 Datasheet - Page 2

• Manufacturer Part Number: rf3145
• Description: Quad-band Gsm/edge/gsm850/dcs/pcs Power Amplifier Module Rf3145
• Manufacturer: RF Micro Devices

RF3145
2 of 18
Absolute Maximum Ratings
Supply Voltage
Power Control Voltage (V
Band Select
TX Enable
RF - Input Power
Max Duty Cycle
Output Load VSWR
Operating Case Temperature
Storage Temperature
GSM US 850MHz Band
Operating Frequency Range
Maximum Output Power
Total Efficiency (PAE)
Input Power for Max Output
Folding Conversion Gain
Output Noise Power
Forward Isolation
Second Harmonic
Third Harmonic
All other Non-Harmonic Spurious
Cross Band Coupling 2F
Input Impedance
Input VSWR
Output Load VSWR
Output Load Ruggedness
Output Load Impedance
Note: V
RAMP,MAX
Parameter
Parameter
=3/8*V
0
RAMP
BATT
+0.18<1.6V
)
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support, contact RFMD at ([phone] or [e-mail].
+34.5
Min.
824
45
+2
-0.3 to +6.0
-0.3 to +1.8
-55 to +150
-30 to +90
Rating
12.0
10:1
Specification
3.0
3.0
50
+32.5
+35.4
Typ.
10:1
-86
-30
6:1
35
+4
50
50
51
-5
Max.
2.5:1
Unit
dBm
849
-84
-25
-36
-20
+6
°C
°C
-5
-7
%
V
V
V
V
0
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Unit
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
MHz
dB
%
%
Ω
Ω
Caution! ESD sensitive device.
Temp=+25 °C, V
V
Freq=824MHz to 849MHz, 25% Duty Cycle,
Pulse Width=1154μs, TX EN=High
Temp = 25°C, V
V
Temp=+85
V
At P
At P
F
40dBm, measured at 869MHz in 100kHz
RBW (Max Power)
RBW=100kHz, 869MHz to 894MHz,
P
Over all power levels
Over all power levels
Measured at DCS/PCS port. Over all power lev-
els.
Over all power levels
Spurious<-36dBm, V
RBW=3MHz
Load impedance presented at RF OUT pad
TX_ENABLE=0V, V
0
MODE
RAMP
RAMP
OUT
=849MHz, other signal 829MHz at -
OUT
OUT
>+5dBm
=V
=0.2V
=Low, V
=31.5dBm
,
MAX
RAMP,MAX
o
, V
C, V
RAMP
CC
CC
BATT
CC
=3.5V
Condition
=3.5V,
RAMP
=3.5V, BandSel=Low,
=V
=3.0V, V
RAMP
RAMP,MAX
=0.2, P
=0.2V to 1.6V,
RAMP
Rev A4 DS050919
IN
, P
=+6dBm
=V
IN
RAMP,MAX
=+4dBm