psmn005 NXP Semiconductors, psmn005 Datasheet - Page 7

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psmn005

Manufacturer Part Number
psmn005
Description
Psmn005-30k Trenchmos Tm Logic Level Fet
Manufacturer
NXP Semiconductors
Datasheet

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Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
I
V
D
GS
= 1 mA; V
junction temperature.
= 0 V; f = 1 MHz
4
3
2
1
0
-60
DS
= V
0
GS
max
typ
min
60
120
(pF)
C
10 4
10 3
10 2
10 -1
03af65
180
Rev. 01 — 6 March 2002
1
Fig 10. Sub-threshold drain current as a function of
10
T
j
= 25 C; V
V DS (V)
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
gate-source voltage.
C iss
C oss
C rss
0
03ah10
10 2
DS
= 5 V
1
min
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
PSMN005-30K
2
typ
3
max
03af66
4
7 of 12

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