psmn005 NXP Semiconductors, psmn005 Datasheet - Page 5

• Manufacturer Part Number: psmn005
• Description: Psmn005-30k Trenchmos Tm Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
8. Characteristics
Table 5:
T
9397 750 09334
Product data
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
g
Q
Q
Q
C
C
C
t
t
t
t
Source-drain (reverse) diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
fs
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
r
= 25 C unless otherwise specified
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
forward transconductance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
reverse recovery time
recovery charge
Characteristics
Conditions
I
I
V
V
V
V
V
I
V
V
I
D
D
D
S
S
DS
GS
GS
GS
DS
GS
DD
T
T
T
T
T
T
T
= 15 A; V
= 10 A; dI
= 250 A; V
= 1 mA; V
= 20 A; V
Rev. 01 — 6 March 2002
j
j
j
j
j
j
j
= 30 V; V
= 20 V; V
= 10 V; I
= 4.5 V; I
= 15 V; I
= 0 V; V
= 15 V; R
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 25 C
= 25 C
GS
DD
S
DS
DS
D
D
/dt = 100 A/ s; V
D
GS
L
GS
= 15 A
= 20 A
= 0 V
= 15 V; V
DS
= V
= 13 A
= 25 V; f = 1 MHz
= 15 ; V
= 0 V
= 0 V
= 0 V
GS
GS
GS
= 4.5 V
= 10 V; R
GS
= 0 V
G
= 6
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
PSMN005-30K
Min
30
1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
4.4
6.6
60
34
15
14
3100 -
605
405
18
16
65
45
0.81
35
20
Max
-
3
-
3.4
1
0.5
100
5.5
8
-
-
-
-
-
-
-
-
-
-
1.3
-
-
5 of 12
Unit
V
V
V
V
mA
nA
m
m
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
A