psmn005-75p NXP Semiconductors, psmn005-75p Datasheet - Page 6

• Manufacturer Part Number: psmn005-75p
• Description: N-channel Logic Level Field-effect Power Transistor In A Plastic Package Using Trenchmos Technology.
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 09743
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
0.015
0.005
( )
0.01
T
T
300
(A)
200
100
I D
j
j
0
= 25 C
0
= 25 C
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
V GS = 20 V
T j = 25 ºC
10 V
20 V
8 V
5 V
0.5
100
7.5 V
5.5 V
10 V
1
8 V
7 V
200
6 V
7 V
V GS = 4.5 V
1.5
T j = 25 ºC
V DS (V)
I D (A)
6.5 V
5.5 V
6.5 V
03ah92
5 V
6 V
03ah93
300
2
Rev. 01 — 26 April 2002
N-channel enhancement mode field-effect transistor
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
a
T
(A)
a
I D
100
2.5
1.5
0.5
j
80
60
40
20
= 25 C and 175 C; V
2
1
0
=
0
-60
function of gate-source voltage; typical values.
factor as a function of junction temperature.
0
---------------------------- -
R
DSon 25 C
R
V DS > I D x R DSon
DSon
1
PSMN005-75P/75B
0
2
T j = 175 ºC
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
DS
60
3
> I
D
x R
4
DSon
120
5
25 ºC
T
V GS (V)
j
03ah94
(ºC)
03aj03
180
6
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