ipp072n10n3 Infineon Technologies Corporation, ipp072n10n3 Datasheet - Page 7

• Manufacturer Part Number: ipp072n10n3
• Description: Optimos 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.1
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
110
105
100
1
95
90
AV
1
-60
=f(T
); R
j
GS
); I
j(start)
=25 Ω
-20
D
=1 mA
10
20
150 °C
t
AV
T
j
60
[µs]
[°C]
100 °C
100
100
25 °C
140
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
IPP072N10N3 G
=80 A pulsed
g s
20
Q
Q
20 V
gate
g
Q
sw
[nC]
Q
50 V
g d
IPI072N10N3 G
40
80 V
Q
g ate
2008-10-21
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