ipp072n10n3 Infineon Technologies Corporation, ipp072n10n3 Datasheet - Page 6

• Manufacturer Part Number: ipp072n10n3
• Description: Optimos 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.1
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
16
14
12
10
DS
=f(T
8
6
4
2
0
4
3
2
1
-60
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz
=80 A; V
20
20
GS
98 %
V
=10 V
T
j
DS
60
Ciss
40
Coss
[°C]
Crss
[V]
typ
100
60
140
180
page 6
80
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
3.5
2.5
1.5
0.5
10
10
10
10
=f(T
SD
4
3
2
1
0
3
2
1
0
-60
)
0
j
); V
D
j
GS
-20
IPP072N10N3 G
=V
0.5
DS
20
175 °C
90 µA
V
T
SD
j
25 °C, 98%
60
[°C]
1
[V]
25 °C
900 µA
100
IPI072N10N3 G
1.5
140
175 °C, 98%
2008-10-21
180
2