ipp072n10n3 Infineon Technologies Corporation, ipp072n10n3 Datasheet
ipp072n10n3
Available stocks
Related parts for ipp072n10n3
ipp072n10n3 Summary of contents
Page 1
... =100 ° =25 °C D,pulse C =25 Ω = =25 °C tot stg page 1 IPP072N10N3 G IPI072N10N3 G 100 V 7.2 mΩ Value Unit 320 160 mJ ±20 V 150 W -55 ... 175 °C 55/175/56 2008-10-21 ...
Page 2
... GSS = =80 A DS(on = |>2 DS(on)max = (one layer, 70 µm thick) copper area for drain page 2 IPP072N10N3 G IPI072N10N3 G Values Unit min. typ. max K 100 - - V 2 2.7 3.5 - 0.1 1 µ 100 - 1 ...
Page 3
... oss =25 ° S,pulse = =25 ° = /dt =100 A/µ page 3 IPP072N10N3 G IPI072N10N3 G Values Unit min. typ. max. - 3690 4910 pF - 646 - - ...
Page 4
... C 4 Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µ 100 µ [V] DS page 4 IPP072N10N3 G IPI072N10N3 G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 200 ...
Page 5
... [ Typ. forward transconductance g =f 160 120 80 25 ° [V] GS page 5 IPP072N10N3 G IPI072N10N3 =25 ° 4 7 100 I [A] D =25 ° 100 I [A] D 150 150 2008-10-21 ...
Page 6
... Forward characteristics of reverse diode I =f parameter Ciss Coss Crss [V] DS page 6 IPP072N10N3 G IPI072N10N3 900 µA 90 µA - 100 140 T [° 175 °C, 98% 25 °C 175 °C 25 °C, 98% 0.5 1 1.5 V [V] ...
Page 7
... °C 100 ° 100 1000 0 [µs] 16 Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPP072N10N3 G IPI072N10N3 =80 A pulsed [nC] gate ate 2008-10-21 ...
Page 8
... PG-TO220-3: Outline Rev. 2.1 IPP072N10N3 G page 8 IPI072N10N3 G 2008-10-21 ...
Page 9
... PG-TO262-3 Rev. 2.1 IPP072N10N3 G page 9 IPI072N10N3 G 2008-10-21 ...
Page 10
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 IPP072N10N3 G page 10 IPI072N10N3 G 2008-10-21 ...