ipp230n06l3g Infineon Technologies Corporation, ipp230n06l3g Datasheet - Page 7

• Manufacturer Part Number: ipp230n06l3g
• Description: Optimos Tm 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
100
=f(t
10
1
70
65
60
55
50
0.1
AV
-60
=f(T
); R
j
GS
); I
j(start)
-20
=25 Ω
150 °C
D
=1 mA
1
20
t
100 °C
AV
T
10
j
[µs]
60
[°C]
25 °C
100
100
140
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
12
10
V
V
8
6
4
2
0
g(th)
g s(th)
0
GS
gate
); I
2
DD
Q
D
IPB230N06L3 G IPP230N06L3 G
=30 A pulsed
g s
4
6
Q
Q
8
gate
g
Q
sw
[nC]
10
Q
g d
12
12 V
14
30 V
16
Q
48 V
g ate
2008-12-09
18