ipp230n06l3g Infineon Technologies Corporation, ipp230n06l3g Datasheet - Page 6

• Manufacturer Part Number: ipp230n06l3g
• Description: Optimos Tm 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
44
40
36
32
28
24
20
16
12
DS
=f(T
4
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=30 A; V
20
20
GS
max
V
=10 V
Ciss
T
Coss
Crss
DS
j
60
[°C]
[V]
typ
100
40
140
180
60
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
2.5
1.5
0.5
10
10
10
10
3
2
1
0
=f(T
SD
3
2
1
0
-60
0
)
j
); V
D
j
-20
GS
IPB230N06L3 G IPP230N06L3 G
=V
0.5
DS
175 °C
20
11µA
T
V
j
SD
60
[°C]
1
25 °C
[V]
110 µA
100
1.5
140
175 °C, 98%
25 °C, 98%
2008-12-09
180
2