ipp230n06l3g Infineon Technologies Corporation, ipp230n06l3g Datasheet - Page 2

• Manufacturer Part Number: ipp230n06l3g
• Description: Optimos Tm 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
4)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Drain-source on-state resistance
Gate resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJC
thJA
DS(on)
DS(on)
G
minimal footprint
6 cm² cooling area
V
V
V
T
V
T
V
V
V
V
(SMD)
V
(SMD)
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
GS
GS
=25 °C
=125 °C
=30 A
DS
=V
=60 V, V
=60 V, V
=0 V, I
=20 V, V
=10 V, I
=4.5 V, I
=10 V, I
=4.5 V, I
|>2|I
GS
, I
D
2
|R
D
(one layer, 70 µm thick) copper area for drain
D
=1 mA
D
D
=11 µA
D
D
GS
GS
DS
DS(on)max
=30 A
=30 A,
=15 A
=15 A,
=0 V,
=0 V,
=0 V
4)
,
IPB230N06L3 G IPP230N06L3 G
min.
1.2
60
16
-
-
-
-
-
-
-
-
-
-
-
Values
19.0
28.6
18.7
28.3
typ.
1.7
0.1
0.9
10
31
1
-
-
-
-
max.
40.8
23.0
40.8
100
100
4.2
2.2
62
40
23
1
-
-
-
Unit
K/W
V
µA
nA
mΩ
Ω
S
2008-12-09