MBM300GS12AW Hitachi, MBM300GS12AW Datasheet - Page 3

• Manufacturer Part Number: MBM300GS12AW
• Description: IGBT Module Silicon N-Channel IGBT
• Manufacturer: Hitachi

1000
1.5
0.5
100
0.1
60
50
40
30
20
10
1
0
10
0
1
0
0
0
Vcc=600V
V
R
T
Resistive Load
Vcc=600V
V
R
T
Inductive Load
C
GE
G
C
GE
G
=25°C
=4.3W
=125°C
=4.3W
V
R
T
=±15V
=±15V
Switching time vs. Collector current
C
GE
G
£125°C
Switching loss vs. Collector current
200
=4.3W
=±15V
Reverse biased safe operating area
Collector to Emitter Voltage, V
100
100
Collector Current, I
400
Collector Current, I
tr
600
200
200
tf
800
C
C
1000
(A)
(A)
300
300
Err
toff
ton
Eton
Etoff
CE
TYPICAL
TYPICAL
1200
(V)
1400
400
400
0.001
0.1
100
10
0.01
10
0.1
1
1
1
0.001
1
1
V
V
I
T
Resistive Load
C
C
V
V
I
T
Inductive Load
CC
GE
=300A
C
=25°C
C
CC
GE
=600V
=±15V
=300A
=125°C
=600V
=±15V
Switching loss vs. Gate resistance
Switching time vs. Gate resistance
Transient thermal impedance
0.01
Gate Resistance, R
Gate Resistance, R
Err
Etoff
Eton
Time, t (s)
10
10
0.1
ton
tr
tf
toff
G
G
(W)
(W)
1
PDE-M300GS12AW-0
TYPICAL
TYPICAL
Diode
IGBT
100
100
10