MBM300GS12AW Hitachi, MBM300GS12AW Datasheet - Page 2

• Manufacturer Part Number: MBM300GS12AW
• Description: IGBT Module Silicon N-Channel IGBT
• Manufacturer: Hitachi

600
500
400
300
200
100
Collector to Emitter voltage vs. Gate to Emitter voltage
10
20
15
10
0
8
6
4
2
0
5
0
Collector current vs. Collector to Emitter voltage
0
0
0
Tc=25°C
Tc=25°C
Vcc=600V
Ic =300A
Tc=25°C
Collector to Emitter Voltage, V
VGE=15V 13V12V
Gate to Emitter Voltage, V
500
2
Gate charge characteristics
5
Gate Charge, Q
14V
1000
4
10
1500
6
G
Pc=1700W
(nc)
GE
15
CE
(V)
2000
8
Ic=600A
Ic=300A
TYPICAL
TYPICAL
(V)
TYPICAL
10
2500
20
9V
11V
10V
Collector to Emitter voltage vs. Gate to Emitter voltage
600
500
400
300
200
100
600
500
400
300
200
100
10
0
8
6
4
2
0
0
Collector current vs. Collector to Emitter voltage
0
0
0
Tc=125°C
Tc=125°C
V
Tc=25°C
Tc=125°C
GE
Forward voltage of free-wheeling diode
=0
Collector to Emitter Voltage, V
Gate to Emitter Voltage, V
VGE=15V 13V12V
2
1
5
Forward Voltage, V
14V
4
2
10
6
3
F
(V)
GE
15
CE
(V)
8
Ic=600A
Ic=300A
TYPICAL
PDE-M300GS12AW-0
4
TYPICAL
(V)
TYPICAL
10
20
5
10V
11V
9V