MBM200GR12 Hitachi, MBM200GR12 Datasheet - Page 3

• Manufacturer Part Number: MBM200GR12
• Description: IGBT POWER MODULE
• Manufacturer: Hitachi

10000
1000
100
1.5
0.5
10
40
30
20
10
1
0
1
0
0
0
0
Vcc 600V
V
R
T
Resistive Load
V
V
R
T
Inductive Load
V
R
T
GE
C
G
CC
GE
C
G
GE
C
G
25 C
125 C
6.2
6.2
200
125 C
Switching time vs. Collector current
600V
Switching loss vs. Collector current
6.2
Reverse biased safe operating area
15V
15V
Collector to Emitter Voltage, V
15V
400
100
Collector Current, I
Collector Current. I
100
600
800
200
1000
200
C
C
tf
toff
ton
tr
(A)
(A)
Etoff
Eton
Err
CE
1200 1400
TYPICAL
TYPICAL
(V)
300
300
0.001
0.01
0.1
100
10
0.1
0.1
10
1
0.001
1
1
1
1
V
V
I
T
Resistive Load
C
C
V
V
I
T
Inductive Load
CC
GE
C
C
CC
GE
200A
25 C
600V
200A
125 C
Switching time vs. Gate resistance
15V
300V
Switching loss vs. Gate resistance
15V
Transient thermal impedance
0.01
Gate Resistance, R
Gate Resistance. R
toff
Time, t (s)
10
0.1
10
G
G
ton
tr
tf
( )
( )
1
Eton
Etoff
Err
TYPICAL
TYPICAL
PDE-M200GR12-0
Diode
IGBT
100
100
10