MBM200GR12 Hitachi, MBM200GR12 Datasheet
MBM200GR12
Manufacturer Part Number
MBM200GR12
Description
IGBT POWER MODULE
Manufacturer
Hitachi
Datasheet
1.MBM200GR12.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBM200GR12
Manufacturer:
HITACH
Quantity:
20 000
Part Number:
MBM200GR12
Quantity:
60
[Rated 200A/1200V, Dual-pack type]
FEATURES
CIRCUIT DIAGRAM
ABSOLUTE MAXIMUM RATINGS(T
Notes; *1: RMS current of Diode £ 60 Arms
CHARACTERISTICS (T
Notes; *4:R
Remark; The specification given herein, is subject to change without prior notice to improve product characteristics.
· Low saturation voltage and high speed.
· Low turn-OFF switching loss.
· Low noise due to build-in free-wheeling diode.
· High reliability structure.
· Isolated heat sink (terminals to base).
Hitachi IGBT Module / Silicon N-Channel IGBT
MBM200GR12
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Forward Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Switching Times
Peak Forward Voltage Drop
Reverse Recovery Time
Thermal Impedance
C2E1
(Ultra Soft and Fast recovery Diode (USFD))
*2, *3 : Recommended value 1.67 N·m (17 kgf·cm)
the suitable R
G
value is the test condition’s value for decision of the switching times, not recommended value, please determine
Item
Item
E2
G
IGBT
FWD
Rise Time
Turn-ON Time
Fall Time
Turn-Off Time
DC
1ms
DC
1ms
Terminals
Mounting
value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted.
C
=25°C)
C1
Symbol
V
V
R
R
I
I
V
CE(sat)
GE(TO)
C
GES
CES
t
t
th(j-c)
th(j-c)
t
t
t
on
off
FM
ies
rr
r
f
C
Symbol
=25°C)
G1
G2
E2
V
V
E1
T
V
I
I
P
-
CES
GES
I
I
T
CP
FM
stg
C
F
iso
°C/W
C
j
Unit
mA
nA
pF
ms
ms
V
V
V
(kgf·cm)
Min.
OUTLINE DRAWING
-
-
-
-
-
-
-
-
-
-
-
-
Unit
N·m
°C
°C
W
V
V
A
A
V
RMS
2- 5.6
19000
0.35
Typ.
2.2
0.2
0.2
0.5
2.5
-
-
-
-
-
3-M5
±500
Max.
0.35
0.35
0.20
0.11
1.0
2.8
0.5
0.8
1.0
3.5
10
-
C2E1
19
23
V
V
I
V
V
V
R
R
V
I
I
Junction to case
2500(AC 1 minute)
C
F
F
CE
GE
CE
CE
CC
GE
=200A, V
=200A, V
=200A, V
L
G
=3.0W
=6.2W
=1200V, V
=5V, I
=10V, V
92
80
20
E2
=±20V, V
=600V
=±15V
-40 ~ +150
-40 ~ +125
1.96(20)
1.96(20)
Value
1200
1130
23
200
±20
200
400
400
Spec. No. IGBT-SP-99024(R1)
C
18.5
Test Conditions
=200mA
40
GE
GE
GE
*4
GE
C1
0.8
CE
=0V
=-10V, di/dt=300A/ms
=15V
=0V, f=1MHz
*1
GE
=0V
=0V
*2
*3
4-Fast-on
Terminal #110
Weight : 230g
Unit in mm
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MBM200GR12 Summary of contents
Page 1
... Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12 [Rated 200A/1200V, Dual-pack type] FEATURES · Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) · High reliability structure. ...
Page 2
VGE 15V14V13V 400 = ° 300 = Pc 1130W 200 100 Collector to Emitter Voltage Collector current vs. Collector to Emitter voltage 10 = ° ...
Page 3
Vcc 600V V 15V Resistive Load 1 toff 0.5 ton 100 200 Collector Current Switching time vs. Collector current 40 V 600V CC V 15V ...
Page 4
... Or consult Hitachi’s sales department staff event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to this data sheets. Hitachi ...