SGA-8343X Stanford Microdevices, SGA-8343X Datasheet
SGA-8343X
Related parts for SGA-8343X
SGA-8343X Summary of contents
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... Reliability Qualification Report Products Qualified by Similarity 303 S. Technology Ct, Broomfield CO, 80021 SGA-8343X Phone: (800) SMI-MMIC http://www.sirenza.com Document RQR-103655 Rev A ...
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... Sirenza Microdevices’ SGA-8343X is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from GHz. The SGA-8343X is optimized for 3V operation but can be biased at 2V for low voltage battery operated systems. The device provides high gain, low NF, and excellent linearity at a low cost ...
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... JESD 22-A113B Moisture Sensitivity Level 1 (MSL-1). MSL-1 indicates that no special dry pack requirements or time limits from opening of static bag to reflow exist for the SGA-8343X. MSL-1 is highest level of moisture resistance that a device can be classified according to the above mentioned standard ...
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... The following table indicates the JESD ESD sensitivity classification levels. The results of the testing indicate that SGA-8343X’s HBM ESD rating is Class 1B. ...
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... SGA-8343X Reliability Qualification Report Group A1a Temperature Cycling (Air to Air Thermal Shock) – Soldered on PCB Test Conditions Temperature Range -65°C to 165°C, 10 min dwell, 1 minute transition, 1000 cycles Number of 17 Devices Under Test Group A1b Temperature Cycling (Air to Air Thermal Shock) Test Conditions Temperature Range -65° ...
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... SGA-8343X Reliability Qualification Report Group D Power Temperature Cycle Test Conditions Temperature = -40°C to 85°C, Asynchronous bias, Test Duration = 168 hours Number of 20 Devices Under Test Group E Low Temperature Storage Test Conditions Temperature = -40°C, Test Duration = 1000 hours Number of 20 Devices Under ...
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... SGA-8343X Reliability Qualification Report Group J Tin Whiskering Biased Test Conditions Temperature 51°C/85% humidity. Test Duration 1000 hours. Number of 15 Devices Under Test Group K Tin Whiskering Unbiased Test Conditions Temperature 51°C/85% humidity. Test Duration 1000 hours. Number of 15 Devices Under Test (1) 1 device removed for improper assembly. See CAR number 350; Reference FA04032. ...
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... The results are displayed below for the device running at operational current of 50mA, a device voltage of 4V, and a lead temperature of 85° 112.9°C Figure 2: Infrared Thermal Image of SGA-8343X, Vd =4V, Id =50 mA, T lead = 85°C ...
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... Ea of 0.7eV is conservative, 0.85eV is the activation energy for electromigration which is assumed to be the primary failure mechanism for the SiGe process. **Sirenza Microdevices does not assume any liability arising from the use of this data. Table 3: Median Time to Failure and Activation Energy for SGA-8343X. C. The test exceeded 10,000 hours (1.14 years) with no ° ...