BB501M Hitachi, BB501M Datasheet

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BB501M

Manufacturer Part Number
BB501M
Description
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Manufacturer
Hitachi
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
BB501M
Manufacturer:
RENESAS
Quantity:
65 000
Part Number:
BB501MAS-TL
Manufacturer:
HITACH
Quantity:
48 000
Features
Outline
Notes: 1. Marking is “AS–”.
Build in Biasing Circuit; To reduce using parts cost & PC board space.
High gain;
PG = 21.5 dB typ. at f = 900 MHz
Low noise;
NF = 1.85 dB typ. at f = 900 MHz
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4(SOT-143mod)
2. BB501M is individual type number of HITACHI BBFET.
Build in Biasing Circuit MOS FET IC
MPAK-4
UHF RF Amplifier
BB501M
3
2
4
1
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-700C (Z)
4th. Edition
Nov. 1998

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BB501M Summary of contents

Page 1

... Low noise 1.85 dB typ 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4(SOT-143mod) Outline Notes: 1. Marking is “AS–”. 2. BB501M is individual type number of HITACHI BBFET. BB501M UHF RF Amplifier MPAK ...

Page 2

... BB501M Absolute Maximum Ratings ( Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Electrical Characteristics ( Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current I ...

Page 3

... Main Characteristics Test Circuit for Operating Items ( Input , |yfs|, Ciss, Coss, Crss, NF, PG) D(op) Gate 1 Gate 2 Drain Application Circuit = 4 to 0.3 V AGC BBFET Source RFC Output BB501M 3 ...

Page 4

... BB501M 900MHz Power Gain, Noise Test Circuit Input L1 C4∼C6 L1: L3: : Variable Capacitor(10pF MAX) C1 : Disk Capacitor(1000pF) : Air Capacitor(1000pF) : 47 kΩ ...

Page 5

... G2S 150 200 Drain to Source Voltage Ta (°C) Drain Current vs. Gate1 Voltage (V) BB501M Typical Output Characteristics = ( kΩ Gate1 Voltage V ( ...

Page 6

... BB501M Drain Current vs. Gate1 Voltage kΩ Gate1 Voltage Forward Transfer Admittance vs. Gate1 Voltage kΩ kHz Gate1 Voltage ( ...

Page 7

... D Noise Figure vs. Gate Resistance 900 MHz 0 10 100 ( variable f = 900 MHz BB501M = G2S 20 50 Gate Resistance Noise Figure vs. Drain Current = G2S Drain Current I (mA) ...

Page 8

... BB501M Drain Current vs. Gate Resistance G2S Gate Resistance R Noise Figure vs. Gate2 to Source Voltage Gate2 to Source Voltage 100 kΩ 900 MHz ...

Page 9

... Gain Reduction vs. Gate2 to Source Voltage G2S kΩ Gate2 to Source Voltage V BB501M 1 0 (V) G2S 9 ...

Page 10

... BB501M S11 Parameter vs. Frequency –.2 –.4 –.6 –.8 –1 Test Condition G2S ∼ 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90° 120° 150° 180° –150° –120° ...

Page 11

... BB501M S22 ANG MAG ANG 78.1 0.997 –2.0 82.4 0.998 –4.2 78.7 0.997 –6.0 84.8 0.995 –8.1 76.3 0.994 –10.2 84.0 0.992 –12.2 79.0 0.990 –14.2 76.6 0.987 –16.2 80 ...

Page 12

... BB501M Package Dimensions + 0.3 2.8 – 0.1 1.9 0.95 0.95 + 0.1 0.4 – 0. 0.1 0.4 – 0.05 0.95 0.85 1 0.1 0.4 – 0.05 + 0.1 0.6 – 0.05 + 0.1 0.16 – 0. 0.1 Hitachi Code MPAK–4 EIAJ SC–61AA JEDEC — Unit: mm ...

Page 13

... Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document ...

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