BB501M Hitachi, BB501M Datasheet - Page 6

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BB501M

Manufacturer Part Number
BB501M
Description
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Manufacturer
Hitachi
Datasheet

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BB501M
6
30
24
18
12
20
16
12
6
0
8
4
0
V
R
f = 1 kHz
V
R
DS
G
Forward Transfer Admittance
DS
G
Drain Current vs. Gate1 Voltage
= 47 kΩ
1
= 68 kΩ
Gate1 Voltage
1
Gate1 Voltage
= 5 V
= 5 V
vs. Gate1 Voltage
2
2
2 V
3
3
4 V
V
V
G1
G1
(V)
4
4
(V)
3 V
5
5
30
24
18
12
30
24
18
12
6
6
0
0
V
R
f = 1 kHz
V
R
f = 1 kHz
DS
G
DS
Forward Transfer Admittance
G
Forward Transfer Admittance
= 33 kΩ
= 68 kΩ
1
1
Gate1 Voltage
Gate1 Voltage
= 5 V
= 5 V
vs. Gate1 Voltage
vs. Gate1 Voltage
2
2
3
3
V
V
G1
G1
2 V
4 V
(V)
4
(V)
4
3 V
5
5

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