FMA246 Filtronic Compound Semiconductors, FMA246 Datasheet - Page 2

• Manufacturer Part Number: FMA246
• Description: HIGH GAIN X-BAND MMIC AMPLIFIER
• Manufacturer: Filtronic Compound Semiconductors

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A
Notes:
1
permanent damage to the device
2
where P
3
P
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 55°C carrier temperature: P
4
5
some degradation in thermal de-rating performance (P
6
limits before the output stage. The aggregate MMIC thermal resistivity is approximately 80°C/W.
Note: Co-ordinates are referenced from the bottom left
hand corner of the die to the centre of bond pad opening
T
Total Power Dissipation defined as: P
Total Power Dissipation to be de-rated as follows above 22°C:
Users should avoid exceeding 80% of 2 or more Limits simultaneously
For optimum heatsinking eutectic die attach is recommended; conductive epoxy die attach is acceptable with
Thermal Resistivity: The nominal value of 250°C/W is stated for the input stage, which will reach temperature
P
TOT
A
BSOLUTE
Simultaneous Combination of Limits
Ambient
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AD
= 1.4 - (0.004W/°C) x T
Total Power Dissipation
D
1624 x 2050
L
Storage Temperature
D E F G H I J K L
= 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause
Gain Compression
AYOUT
IE
(μm)
DC
P
where T
RF Input Power
Supply Voltage
Supply Current
ARAMETER
S
: DC Bias Power, P
IZE
M
C
AXIMUM
:
CARRIER
D
2,3
IE
= carrier or heatsink temperature above 22°C
T
R
HICKNESS
4
CARRIER
ATING
IN
Fax: [phone]
100
Preliminary specifications subject to change without notice
: RF Input Power, P
1
:
S
Filtronic Compound Semiconductors Ltd
(μm)
TOT
YMBOL
Comp.
TSTG
PTOT
B
VDD
IDD
PIN
≡ (P
TOT
M
DC
= 1.4 - (0.004 x (55 – 22)) = 1.26W
IN
+ P
. B
OUT
IN
OND
TOT
) – P
: RF Output Power
(μm)
2
100
For standard bias conditions
See De-Rating Note below
= 550mW)
T
Under any bias conditions
For any operating current
P
Non-Operating Storage
OUT
EST
2 or more Max. Limits
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AD
For VDD < 7V
,
P
C
D-F
G-I
J-L
C
ITCH
A
B
ONDITIONS
B
N
P
AME
VD
IN
AD
M
IN
D
Stage 1: Source
Stage 2: Source
Stage 3: Source
. B
ESCRIPTION
Drain Voltage
bias resistors
bias resistors
bias resistors
ROUT
OND PAD
(μm x μm )
RFIN
Website:
100 x 100
A
BSOLUTE
-40°C to 150°C
Preliminary Datasheet v3.0
75% IDSS
O
www.filtronic.com
1400mW
FMA246
-8dBm
PENING
80%
5dB
8V
1234/1374/1513, 143
C
821/962/1102,143
M
415/556/696,143
OORDINATES
AXIMUM
1962, 822
770, 1522
104, 836
(µm)
P
IN