FP1510SOT89 Filtronic Compound Semiconductors, FP1510SOT89 Datasheet
FP1510SOT89
Manufacturer Part Number
FP1510SOT89
Description
LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
Manufacturer
Filtronic Compound Semiconductors
Datasheet
1.FP1510SOT89.pdf
(3 pages)
• FEATURES
• DESCRIPTION AND APPLICATIONS
• ELECTRICAL SPECIFICATIONS @ T
Phone: (408) 988-1845
Fax: (408) 970-9950
♦ 28 dBm Output Power at 1-dB Compression at 1.8 GHz
♦ 19 dB Power Gain at 1.8 GHz
♦ 1.0 dB Noise Figure
♦ 45 dBm Output IP3 at 1.8 GHz
♦ 50% Power-Added Efficiency
The FP1510SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a
0.10 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed
“mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial
structure and processing have been optimized for reliable high-power applications. The FP1510 also
features Si3N4 passivation and is available in die form or in other packages.
Typical applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN
systems, and other types of wireless infrastructure systems.
frequency=1.8 GHz
Output Third-Order Intercept Point
Power Gain at 1-dB Compression
Maximum Drain-Source Current
Saturated Drain-Source Current
Gate-Source Leakage Current
Power at 1-dB Compression
Power-Added Efficiency
Gate-Source Breakdown
Gate-Drain Breakdown
Voltage Magnitude
Voltage Magnitude
Pinch-Off Voltage
Transconductance
LP1510SOT89-1
LP1510SOT89-2
LP1510SOT89-3
Noise Figure
Parameter
Preliminary Data Sheet
Symbol
|V
|V
G-1dB
P-1dB
PAE
I
I
I
IP3
NF
G
MAX
V
BDGD
GSO
BDGS
DSS
M
P
|
|
http:// www.filss.com
L
V
V
V
V
V
OW
DS
Ambient
DS
V
DS
DS
DS
V
V
V
DS
DS
DS
DS
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5V; I
Test Conditions
P
= 2 V; I
P
N
= 2 V; V
= 2 V; V
= 2 V; V
I
V
I
IN
IN
GS
GD
OISE
GS
= 15 dBm
= -1 dBm
= 25°C
= 8 mA
= 8 mA
DS
DS
= -5 V
DS
DS
DS
DS
= 50% I
= 50% I
= 50% I
= 50% I
= 50% I
, H
GS
GS
GS
= 8 mA
= 0 V
= 1 V
= 0 V
IGH
DSS
DSS
DSS
DSS
DSS
L
;
;
INEARITY
FP1510SOT89
-0.25
Min
26.5
451
527
375
300
17
10
10
P
ACKAGED
Revised: 2/26/02
Email: sales@filss.com
Typ
-1.2
420
490
560
925
400
1.0
28
19
50
45
10
12
13
Max
-2.0
450
526
600
100
PHEMT
Units
dBm
dBm
mA
mA
mA
mA
mS
µA
dB
dB
%
V
V
V
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FP1510SOT89 Summary of contents
Page 1
... Output IP3 at 1.8 GHz ♦ 50% Power-Added Efficiency • DESCRIPTION AND APPLICATIONS The FP1510SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.10 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “ ...
Page 2
... DC Bias Power Input Power Output Power OUT P = 2.3W – (0.015W/° TOT PACK where T = source tab lead temperature. PACK http:// www.filss.com FP1510SOT89 L P IGH INEARITY ACKAGED Min Max = 22 ± 3 ° ± 3 ° ± 3 °C I DSS = 22 ± 3 ° ± ...
Page 3
... PACKAGE OUTLINE (dimensions in inches) All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 Preliminary Data Sheet OISE http:// www.filss.com FP1510SOT89 L P PHEMT IGH INEARITY ACKAGED Revised: 2/26/02 Email: sales@filss.com ...