FP4050 Filtronic Compound Semiconductors, FP4050 Datasheet
FP4050
Manufacturer Part Number
FP4050
Description
2-WATT POWER PHEMT
Manufacturer
Filtronic Compound Semiconductors
Datasheet
1.FP4050.pdf
(2 pages)
Phone: (408) 988-1845
Fax: (408) 970-9950
FEATURES
DESCRIPTION AND APPLICATIONS
The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.50 um by 400 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes
parasitic gate-source and gate resistances. The FP4050 features Si3N4 passivation.
Typical applications include commercial and military high-performance power amplifiers, including
SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and
medium-haul digital radio transmitters. This device is also suitable as a power stage for WLAN and
ISM band spread spectrum applications.
ELECTRICAL SPECIFICATIONS @ T
Maximum Drain-Source Current
Saturated Drain-Source Current
48 dBm IP3 at 2 GHz
34 dBm P-1dB at 2 GHz
14 dB Power Gain at 2 GHz
Gate-Source Breakdown
Gate-Drain Breakdown
Gate-Source Leakage
Thermal Resistivity
Voltage Magnitude
Voltage Magnitude
Current Magnitude
1 dB Compression
1 dB Compression
Pinch-Off Voltage
Transconductance
Output Power @
Power Gain @
Parameter
PRELIMINARY DATA SHEET
Symbol
|V
|V
I
|I
P
G
I
Q
MAX
BDGD
G
BDGS
DSS
V
GSL
1dB
http:// www.filtronicsolidstate.com
1dB
M
JC
P
|
|
|
Ambient
f = 2 GHz; V
f = 2 GHz; V
V
= 2 2 ± 3 °C
V
DS
V
V
DS
DS
DS
Test Conditions
= 2 V; I
= 2 V; V
I
I
DS
DS
= 2V; V
= 2V; V
GS
GS
V
GS
= 8V; I
= 8V; I
= 20 mA
= 20 mA
= -5 V
DS
GS
GS
GS
= 10 mA
DS
DS
= 0V
= 1V
= 0 V
= 50% I
= 50% I
BOND PAD
BOND PAD
BOND PAD
SOURCE
GATE
DSS
DSS
DRAIN
2-W
(2X)
Min
950
12
12
ATT
P
1100
2200
Typ
880
-1.2
34
14
15
15
15
OWER
Revised: 10/04/00
FP4050
Max
1300
0.2
PHEMT
Units
dBm
mA
mA
mA
C/W
mS
dB
V
V
V
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FP4050 Summary of contents
Page 1
... P-1dB at 2 GHz 14 dB Power Gain at 2 GHz DESCRIPTION AND APPLICATIONS The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct- write 0. 400 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances ...
Page 2
... Symbol Test Conditions Ambient Ambient Ambient Ambient Ambient Ambient T STG http:// www.filtronicsolidstate.com FP4050 2-W P ATT OWER Units Min Max 800 = 180 = TBD = 175 = — -65 175 ...