FMA219 Filtronic Compound Semiconductors, FMA219 Datasheet - Page 2

• Manufacturer Part Number: FMA219
• Description: X-BAND LNA MMIC
• Manufacturer: Filtronic Compound Semiconductors

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A
Notes:
1.
2.
3.
4.
P
BSOLUTE
AD
A
Tel: [phone]
T
permanent damage to the device
Total Power Dissipation is defined as: P
where P
Total Power Dissipation shall be de-rated above 22°C as follows:
P
where T
The quoted Thermal Resistance value is a worst-case figure assuming Gold/Tin die attach onto a Copper
substrate. The use of epoxy die attach and substrate materials of lower thermal conductivity will increase the
Thermal Resistance. Further information and assistance is available on request.
Θ
Total Power Dissipation
Ambient
TOT
L
JC
D
1624 x 1624
Storage Temperature
Thermal Resistance
AYOUT
Gain Compression
increases linearly from 175°C/W at a T
IE
(µm)
P
= (150 – T
RF Input Power
Supply Voltage
Supply Current
ARAMETER
S
= 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause
CASE
IZE
DC
M
= DC Bias Power, P
:
AXIMUM
= Temperature of the on the underside of the package or substrate
CASE
D
4
2,3
IE
) / Θ
T
C
R
HICKNESS
ATING
JC
Fax: [phone]
100
W
B
1
IN
Specifications subject to change without notice
:
S
Filtronic Compound Semiconductors Ltd
(µm)
= RF Input Power, P
YMBOL
Comp.
TSTG
PTOT
VDD
ΘJC
IDD
PIN
TOT
M
CASE
IN
= P
. B
of 22°C to 210°C/W at a T
DC
750mW dissipation, heatsink temp 22°C
OND
+ P
(µm)
>150
2
For standard bias conditions
See De-Rating Note below
T
Under any bias conditions
IN
For any operating current
OUT
P
Non-Operating Storage
EST
Email: [e-mail]
AD
– P
Note: Co-ordinates are referenced from the bottom
left hand corner of the die to the centre of bond pad
opening
For VDD < 5V
= RF Output Power
P
OUT
C
C
ITCH
A
B
ONDITIONS
N
P
AME
VD
IN
AD
M
CASE
IN
D
. B
ESCRIPTION
Drain Voltage
of 145°C
ROUT
OND PAD
(µm x µm )
RFIN
Website:
A
92 x 92
BSOLUTE
-40°C to 150°C
O
www.filtronic.com
175°C/W
750mW
100mA
FMA219
5dBm
PENING
5dB
6V
C
M
OORDINATES
AXIMUM
1527, 843
1177, 103
102, 888
Datasheet v3.0
(µm)
P
IN