PBSS8110T Philips Semiconductors, PBSS8110T Datasheet - Page 9

• Manufacturer Part Number: PBSS8110T
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
2003 Dec 22
handbook, halfpage
100 V, 1 A
NPN low V
R CEsat
T
(1) I
(2) I
(3) I
(4) I
Fig.13 Collector current as a function of
I
T
Fig.15 Collector-emitter equivalent on-resistance
C
amb
amb
/I
( )
(A)
B
10
I
1.6
1.2
0.8
0.4
C
10
10
= 20.
B
B
B
B
= 25 C.
= 25 C.
10
2
0
10
1
= 3500 A.
= 3150 A.
= 2800 A.
= 2450 A.
3
2
1
0
collector-emitter voltage; typical values.
1
as a function of collector current; typical
values.
1
1
CEsat
(5) I
(6) I
(7) I
(8) I
10
2
B
B
B
B
(BISS) transistor
= 2100 A.
= 1750 A.
= 1400 A.
= 1050 A.
10
3
(2)
2
(10)
(6)
(7)
(8)
(9)
(1)
(5)
(3)
(4)
10
4
(9) I
(10) I
V
3
I C (mA)
CE
mle358
B
B
MLE360
(V)
= 700 A.
= 350 A.
10
5
4
9
handbook, halfpage
handbook, halfpage
R CEsat
R CEsat
I
(1) T
(2) T
(3) T
Fig.14 Collector-emitter equivalent on-resistance
I
T
Fig.16 Collector-emitter equivalent on-resistance
C
C
amb
/I
/I
( )
( )
B
B
10
10
10
10
10
10
= 10.
= 50.
= 25 C.
10
10
amb
amb
amb
10
10
1
1
3
2
1
3
2
1
= 100 C.
= 25 C.
= 55 C.
1
1
as a function of collector current; typical
values.
as a function of collector current; typical
values.
1
1
10
10
10
10
(1)
(3)
2
2
PBSS8110T
Product specification
(2)
10
10
3
3
I C (mA)
I C (mA)
MLE359
MLE361
10
10
4
4