PBSS8110T Philips Semiconductors, PBSS8110T Datasheet - Page 6

• Manufacturer Part Number: PBSS8110T
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2003 Dec 22
I
I
I
h
V
R
V
V
f
C
SYMBOL
j
CBO
CES
EBO
T
FE
CEsat
BEsat
BEon
= 25 C unless otherwise specified.
CEsat
c
100 V, 1 A
NPN low V
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
CEsat
300 s;
PARAMETER
(BISS) transistor
0.02.
V
V
V
V
V
V
V
V
I
I
I
I
V
I
f = 100 MHz
V
C
C
C
C
C
C
CB
CB
CE
EB
CE
CE
CE
CE
CE
CB
= 100 mA; I
= 500 mA; I
= 1 A; I
= 1 A; I
= 1 A; I
= 50 mA; V
= 4 V; I
= 80 V; I
= 80 V; I
= 80 V; V
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
6
B
B
B
CONDITIONS
= 100 mA; note 1
= 100 mA; note 1
= 100 mA
C
E
E
C
C
C
C
C
E
= 0
BE
CE
B
B
= 0
= 0; T
= I
= 1 mA
= 250 mA
= 500 mA; note 1
= 1 A; note 1
= 1 A
= 10 mA
= 50 mA
= 0
= 10 V;
e
= 0; f = 1 MHz
j
= 150 C
150
150
100
80
100
MIN.
165
TYP.
PBSS8110T
Product specification
100
50
100
100
500
40
120
200
200
1.05
0.9
7.5
MAX.
nA
nA
nA
mV
mV
mV
m
V
V
MHz
pF
UNIT
A