PBSS8110T Philips Semiconductors, PBSS8110T Datasheet - Page 5

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PBSS8110T

Manufacturer Part Number
PBSS8110T
Description
NPN low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
2003 Dec 22
100 V, 1 A
NPN low V
(1)
(2)
(K/W)
Z
th
10
10
Fig.4 Transient thermal impedance as a function of pulse time for collector 1 cm
10
= 1.0.
= 0.75.
1
3
2
10
5
(10)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
CEsat
(3)
(4)
10
4
= 0.5.
= 0.03.
(BISS) transistor
10
(5)
(6)
3
= 0.2.
= 0.1.
10
2
(7)
(8)
= 0.05.
= 0.02.
10
5
1
(9)
(10) = 0.0.
1
= 0.01.
10
2
P
copper mounting pad.
t
p
10
T
2
PBSS8110T
Product specification
t
p
=
(s)
t
T
mle355
t
p
10
3

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