PBSS5520X NXP Semiconductors, PBSS5520X Datasheet - Page 7

• Manufacturer Part Number: PBSS5520X
• Description: 20V 5A PNP low VCEsat (BISS) transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Nov 08
I
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
EBO
CES
T
FE
CEsat
BEsat
BEon
CEsat
c
20 V, 5 A
PNP low V
= 25 C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
collector-emitter cut-off current
DC current gain
collector-emitter saturation voltage I
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
CEsat
300 s;
PARAMETER
(BISS) transistor
0.02.
V
V
V
V
V
I
I
I
I
I
I
I
V
I
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CB
I
I
I
I
= 0.5 A; I
= 1 A; I
= 2.5 A; I
= 4 A; I
= 5 A; I
= 5 A; I
= 4 A; I
= 5 A; I
= 100 mA; V
C
C
C
C
= 5 V; I
= 20 V; I
= 20 V; I
= 20 V; V
= 2 V
= 2 V; I
= 10 V; I
= 0.5 A; note 1
= 1 A; note 1
= 2 A; note 1
= 5 A; note 1
7
CONDITIONS
B
B
B
B
B
B
= 10 mA
= 200 mA; note 1
= 500 mA; note 1
= 500 mA; note 1
= 200 mA; note 1
= 500 mA; note 1
C
B
B
C
E
E
E
= 5 mA
= 125 mA; note 1
= 0 A
= 2 A
BE
= 0 A
= 0 A; T
= i
CE
= 0 V
e
= 10 V;
= 0 A;
j
= 150 C
300
275
250
150
80
MIN.
430
400
360
260
34
100
130
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TYP.
45
70
100
150
170
0.9
0.96
0.74
PBSS5520X
Product specification
54
150
MAX.
100
50
100
100
70
110
150
230
270
1.05
1.1
0.85
nA
nA
nA
mV
mV
mV
mV
mV
m
V
V
V
MHz
pF
UNIT
A