PBSS5520X NXP Semiconductors, PBSS5520X Datasheet - Page 5

• Manufacturer Part Number: PBSS5520X
• Description: 20V 5A PNP low VCEsat (BISS) transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Operated under pulsed conditions; pulse width t
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
5. Device mounted on a 7 cm
2004 Nov 08
R
R
SYMBOL
th(j-a)
th(j-s)
20 V, 5 A
PNP low V
Mounted on FR4 printed-circuit board; standard footprint.
(1)
(2)
(K/W)
Z
10
th
10
10
10
= 1.
= 0.75.
1
3
2
1
10
5
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CEsat
(3)
(4)
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
10
(10)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
4
= 0.5.
= 0.33.
(BISS) transistor
2
PARAMETER
ceramic printed-circuit board, 1 cm
10
(5)
(6)
3
= 0.2.
= 0.1.
10
2
p
(7)
(8)
10 ms; duty cycle
= 0.05.
= 0.02.
10
5
1
in free air
2
(9)
(10) = 0.
single-sided copper, tin-plated.
notes 1 and 2
note 2
note 3
note 4
note 5
1
= 0.01.
CONDITIONS
0.2.
10
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10
VALUE
2
PBSS5520X
225
125
Product specification
50
90
80
16
t
p
006aaa232
(s)
10
3
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
2
2
.
.