PBSS5350X Philips Semiconductors, PBSS5350X Datasheet - Page 8

• Manufacturer Part Number: PBSS5350X
• Description: 50 V/ 3 A PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
2003 Nov 21
handbook, halfpage
handbook, halfpage
50 V, 3 A
PNP low V
I
(1) T
V BEsat
C
Fig.8
T
(1) I
(2) I
(3) I
(4) I
Fig.10 Collector current as a function of
/I
amb
(V)
B
(A)
= 20.
1.2
0.8
0.6
0.4
0.2
I C
0.8
0.6
0.4
0.2
amb
B
B
B
B
= 25 C.
1
1
0
= 3500 A.
= 3150 A.
= 2800 A.
= 2450 A.
10
0
= 55 C.
Base-emitter saturation voltage as a
function of collector current; typical values.
collector-emitter voltage; typical values.
1
0.4
1
CEsat
(2) T
(5) I
(6) I
(7) I
(8) I
amb
10
0.8
B
B
B
B
(BISS) transistor
= 2100 A.
= 1750 A.
= 1400 A.
= 1050 A.
= 25 C.
10
1.2
(1)
(2)
(3)
2
(3) T
(9) I
(10) I
10
1.6
amb
I C (mA)
3
(10)
V CE (V)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
MLE175
B
B
MLE168
= 100 C.
= 700 A.
= 350 A.
10
2
4
8
handbook, halfpage
handbook, halfpage
R CEsat
I
(1) T
Fig.9
T
(1) I
(2) I
(3) I
(4) I
Fig.11 Collector current as a function of
C
amb
/I
( )
10
10
B
(A)
10
10
I C
= 20.
B
B
B
B
10
= 25 C.
amb
5
4
3
2
1
0
1
3
2
1
2
10
= 140 mA.
= 126 mA.
= 112 mA.
= 98 mA.
0
= 150 C.
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
collector-emitter voltage; typical values.
1
(7)
0.4
1
(6)
(2) T
(5) I
(6) I
(7) I
(8) I
(5)
10
amb
0.8
B
B
B
B
(2)
(4)
= 84 mA.
= 70 mA.
= 56 mA.
= 42 mA.
= 25 C.
(3)
10
1.2
(1)
(3)
(2)
2
PBSS5350X
Product specification
(3) T
(10)
(1)
(8)
(9)
(9) I
(10) I
10
1.6
I C (mA)
3
amb
V CE (V)
B
B
MLE172
MLE169
= 55 C.
= 28 mA.
= 14 mA.
10
2
4