PBSS5350X Philips Semiconductors, PBSS5350X Datasheet - Page 5

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PBSS5350X

Manufacturer Part Number
PBSS5350X
Description
50 V/ 3 A PNP low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 6 cm
4. Device mounted on a ceramic printed-circuit board 7 cm
2003 Nov 21
handbook, full pagewidth
R
R
SYMBOL
th j-a
th-js
50 V, 3 A
PNP low V
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm
(1)
(2)
(K/W)
Z th
10
10
10
10
10
1
3
2
1
= 1.
= 0.75.
5
(10)
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
CEsat
(3)
(4)
10
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
4
= 0.5.
= 0.33.
(BISS) transistor
PARAMETER
10
3
(5)
(6)
= 0.2.
= 0.1.
10
2
(7)
(8)
2
= 0.05.
= 0.02.
.
10
5
2
1
, single-sided copper, tinplated.
in free air
CONDITIONS
note 1
note 2
note 3
note 4
(9)
(10) = 0.
1
= 0.01.
10
VALUE
P
225
125
90
80
16
t p
10
T
2
PBSS5350X
Product specification
t p (s)
=
K/W
K/W
K/W
K/W
K/W
t p
T
MLE373
t
10
UNIT
3
2
2
.
.

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