PBSS5350X Philips Semiconductors, PBSS5350X Datasheet - Page 7

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PBSS5350X

Manufacturer Part Number
PBSS5350X
Description
50 V/ 3 A PNP low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
2003 Nov 21
handbook, halfpage
handbook, halfpage
50 V, 3 A
PNP low V
V CEsat
V
(1) T
(2) T
(3) T
Fig.4
I
(1) T
(2) T
(3) T
Fig.6
C
CE
(V)
/I
h FE
10
10
10
B
600
400
200
= 2 V.
= 20.
amb
amb
amb
amb
amb
amb
0
1
1
2
3
10
10
= 100 C.
= 25 C.
= 55 C.
= 100 C.
= 25 C.
= 55 C.
DC current gain as a function of collector
current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
1
1
1
1
CEsat
(2)
10
10
(1)
(3)
(BISS) transistor
10
10
(1)
(2)
(3)
2
2
10
10
I C (mA)
I C (mA)
3
3
MLE171
MLE173
10
10
4
4
7
handbook, halfpage
handbook, halfpage
V CEsat
V
(1) T
(2) T
(3) T
Fig.5
T
(1) I
(2) I
(3) I
Fig.7
CE
amb
(V)
V BE
10
10
10
(V)
= 2 V.
1.2
0 8
0 4
C
C
C
= 25 C.
amb
amb
amb
/I
/I
/I
0
1
1
2
3
10
10
B
B
B
= 100.
= 50.
= 10.
= 55 C.
= 25 C.
= 100 C.
Base-emitter voltage as a function of
collector current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
1
1
1
1
10
10
(1)
(2)
(3)
10
10
(1)
(2)
(3)
2
2
PBSS5350X
Product specification
10
10
I C (mA)
3
I C (mA)
3
MLE170
MLE174
10
10
4
4

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