PBSS5160K NXP Semiconductors, PBSS5160K Datasheet - Page 6

• Manufacturer Part Number: PBSS5160K
• Description: 60V 1A PNP low VCEsat (BISS) transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
PBSS5160K_3
Product data sheet
Table 7.
T
[1]
Symbol
I
I
I
h
V
V
R
V
t
t
t
t
t
t
f
C
CBO
CES
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25 C unless otherwise specified.
Parameter
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter saturation
voltage
collector-emitter
saturation resistance
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
Characteristics
p
300 s;
Rev. 03 — 6 October 2008
0.02.
Conditions
V
V
T
V
V
V
V
V
I
I
I
I
I
I
I
I
V
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
C
C
Boff
j
CB
CB
CE
EB
CE
CE
CE
CE
CB
= 150 C
= 100 mA; I
= 500 mA; I
= 1 A; I
= 1 A; I
= 1 A; I
= 1 A; V
= 0.5 A; I
= 25 mA
= 60 V; I
= 60 V; I
= 60 V; V
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 10 V; I
= 10 V; I
B
B
B
CE
= 100 mA
= 50 mA
= 100 mA
C
Bon
C
C
C
60 V, 1 A PNP low V
E
E
C
E
= 0 A
= 1 mA
= 500 mA
= 1 A
= 5 V
BE
B
B
= 0 A
= 0 A;
= 50 mA;
= i
= 25 mA;
= 1 mA
= 50 mA
= 0 V
e
= 0 A;
[1]
[1]
[1]
[1]
Min
-
-
-
-
200
150
100
-
-
-
-
-
-
-
-
-
-
-
-
150
-
PBSS5160K
CEsat
www.DataSheet4U.com
Typ
-
-
-
-
350
250
160
255
11
30
41
205
55
260
185
9
110
135
255
0.95
0.82
© NXP B.V. 2008. All rights reserved.
(BISS) transistor
Max
-
-
-
340
-
-
-
-
-
-
-
15
100
50
100
100
175
180
340
1.1
0.9
Unit
nA
nA
nA
mV
mV
mV
V
m
V
ns
ns
ns
ns
ns
ns
MHz
pF
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A