PBSS5160K NXP Semiconductors, PBSS5160K Datasheet
PBSS5160K
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PBSS5160K Summary of contents
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... PBSS5160K PNP low V Rev. 03 — 6 October 2008 1. Product profile 1.1 General description PNP low V SOT346 (SC-59A) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160K. 1.2 Features I Low collector-emitter saturation voltage V I High collector current capability I I High collector current gain (h I High effi ...
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... amb Rev. 03 — 6 October 2008 PBSS5160K www.DataSheet4U.com PNP low V (BISS) transistor CEsat Simplified outline Graphic symbol ...
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... P tot (1) (W) 0.4 (2) 0.3 (3) 0.2 0 standard footprint 2 3 Power derating curves Rev. 03 — 6 October 2008 PBSS5160K www.DataSheet4U.com PNP low V (BISS) transistor CEsat Min Max - 150 65 +150 65 +150 006aaa497 80 120 160 amb 2 © NXP B.V. 2008. All rights reserved. ...
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... Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient thermal resistance from junction to solder point O , standard footprint Rev. 03 — 6 October 2008 PBSS5160K www.DataSheet4U.com PNP low V (BISS) transistor CEsat Min Typ Max [ 500 [ 357 [ ...
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... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5160K_3 Product data sheet Rev. 03 — 6 October 2008 PBSS5160K www.DataSheet4U.com PNP low V (BISS) transistor CEsat 006aaa499 (s) p 006aaa500 ...
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... 100 MHz collector capacitance MHz 300 s; 0.02. p Rev. 03 — 6 October 2008 PBSS5160K www.DataSheet4U.com PNP low V (BISS) transistor CEsat Min Typ = ...
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... Fig 6. 006aaa476 1.1 V BEsat (V) 0.9 0.7 0.5 0.3 0 (mA) C (1) T (2) T (3) T Fig 8. Rev. 03 — 6 October 2008 PBSS5160K www.DataSheet4U.com PNP low V (BISS) transistor CEsat 006aaa478 I (mA) = 35.0 B 31.5 28.0 24.5 21 amb Collector current as a function of collector-emitter voltage; typical values 006aaa477 ...
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... R CEsat ( ) (mA) C (1) I (2) I (3) I Fig 12. Collector-emitter saturation resistance as a Rev. 03 — 6 October 2008 PBSS5160K www.DataSheet4U.com PNP low V (BISS) transistor CEsat 006aaa480 (1) (2) ( amb /I = 100 ...
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... (probe) oscilloscope 450 open 100 ; R C Bon Boff Rev. 03 — 6 October 2008 PBSS5160K www.DataSheet4U.com PNP low V (BISS) transistor CEsat input pulse (idealized waveform) I (100 %) Bon I Boff output pulse (idealized waveform ...
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... For further information and the availability of packing methods, see PBSS5160K_3 Product data sheet 3.1 2.7 3 3.0 1.7 2.5 1.3 1 1.9 Dimensions in mm Packing methods Description SOT346 4 mm pitch tape and reel Rev. 03 — 6 October 2008 PBSS5160K www.DataSheet4U.com PNP low V (BISS) transistor CEsat 1.3 1.0 0.6 0.2 2 0.50 0.26 0.35 0.10 04-11-11 [1] Packing quantity 3000 ...
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... Rev. 03 — 6 October 2008 PBSS5160K www.DataSheet4U.com PNP low V (BISS) transistor CEsat solder lands solder resist solder paste 1.9 occupied area Dimensions in mm solder lands 2.9 solder resist occupied area Dimensions in mm preferred transport direction during soldering © NXP B.V. 2008. All rights reserved. ...
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... Data sheet status Product data sheet 9: amended information”: updated Product data sheet Objective data sheet Rev. 03 — 6 October 2008 PBSS5160K www.DataSheet4U.com PNP low V (BISS) transistor CEsat Change notice Supersedes - PBSS5160K_2 - PBSS5160K_1 - - © NXP B.V. 2008. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 03 — 6 October 2008 PBSS5160K www.DataSheet4U.com PNP low V (BISS) transistor CEsat © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PBSS5160K_3 (BISS) transistor All rights reserved. Date of release: 6 October 2008 ...