PBSS4350T Philips Semiconductors, PBSS4350T Datasheet - Page 4

• Manufacturer Part Number: PBSS4350T
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Jan 09
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BEsat
BEon
CEsat
c
50 V; 3 A NPN low V
= 25 C unless otherwise specified.
collector-base cut-off current I
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation
voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
300 s;
PARAMETER
0.02.
CEsat
(BISS) transistor
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
f = 100 MHz
I
E
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
E
= 0; V
= 0; V
= I
= 0; V
= 100 mA; V
= 500 mA; V
= 1 A; V
= 2 A; V
= 3 A; V
= 500 mA; I
= 1 A; I
= 2 A; I
= 2 A; I
= 3 A; I
= 2 A; I
= 2 A; I
= 3 A; I
= 1 A; V
= 100 mA; V
e
= 0; V
CB
CB
EB
B
B
B
B
B
B
B
CE
CE
CE
CE
CONDITIONS
= 50 V
= 50 V; T
= 5 V
= 50 mA
= 300 mA; note 1
= 200 mA; note 1
= 100 mA; note 1
= 200 mA; note 1
= 100 mA; note 1
= 300 mA; note 1
CB
= 2 V; note 1
= 2 V; note 1
= 2 V; note 1
= 2 V; note 1
B
CE
CE
CE
4
= 10 V; f = 1 MHz
= 50 mA
= 2 V
= 2 V
= 5 V;
j
= 150 C
300
300
300
200
100
1.2
100
MIN.
100
TYP.
PBSS4350T
Product specification
100
50
100
80
160
280
260
370
130
1.1
1.2
25
MAX.
nA
nA
mV
mV
mV
mV
mV
m
V
V
V
MHz
pF
UNIT
A