PBSS4350T Philips Semiconductors, PBSS4350T Datasheet - Page 2

• Manufacturer Part Number: PBSS4350T
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN low V
PNP complement: PBSS5350T.
MARKING
Note
1. * = p: Made in Hong Kong.
ORDERING INFORMATION
2004 Jan 09
PBSS4350T
PBSS4350T
Low collector-emitter saturation voltage V
corresponding low R
High collector current capability
High collector current gain
Improved efficiency due to reduced heat generation.
Power management applications
Low and medium power DC/DC convertors
Supply line switching
Battery chargers
Linear voltage regulation with low voltage drop-out
(LDO).
50 V; 3 A NPN low V
NUMBER
* = t: Made in Malaysia.
* = W: Made in China.
TYPE
TYPE NUMBER
CEsat
transistor in a SOT23 plastic package.
NAME
CEsat
MARKING CODE
CEsat
plastic surface mounted package; 3 leads
ZC*
(BISS) transistor
CEsat
and
(1)
2
DESCRIPTION
QUICK REFERENCE DATA
PINNING
handbook, halfpage
V
I
I
R
SYMBOL
PACKAGE
C
CRP
CEO
CEsat
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
collector-emitter voltage
collector current (DC)
repetitive peak collector
current
equivalent on-resistance
base
emitter
collector
1
PARAMETER
3
DESCRIPTION
2
MAM255
Product specification
PBSS4350T
1
50
2
3
130
MAX.
VERSION
SOT23
3
2
V
A
A
m
UNIT