PBSS4250X Philips Semiconductors, PBSS4250X Datasheet - Page 6

• Manufacturer Part Number: PBSS4250X
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Nov 08
I
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
CES
EBO
T
FE
CEsat
BEsat
BEon
CEsat
c
50 V, 2 A
NPN low V
= 25 C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
CEsat
300 s;
PARAMETER
(BISS) transistor
0.02.
V
V
V
V
V
I
I
I
I
I
I
V
I
V
C
C
C
C
C
C
C
CB
CB
CE
EB
CE
CE
CB
I
I
I
I
= 0.5 A; I
= 1 A; I
= 2 A; I
= 2 A; I
= 2 A; I
= 2 A; I
= 100 mA; V
C
C
C
C
= 50 V; I
= 50 V; I
= 50 V; V
= 5 V; I
= 2 V
= 2 V; I
= 10 V; I
= 0.1 A
= 0.5 A
= 1 A; note 1
= 2 A; note 1
B
B
B
B
B
= 50 mA
= 100 mA
= 200 mA; note 1
= 200 mA; note 1
= 100 mA
CONDITIONS
C
B
C
6
E
E
E
= 0 A
= 50 mA
= 1 A
BE
= 0 A
= 0 A; T
= i
CE
= 0 V
e
= 5 V; f = 100 MHz 100
= 0 A; f = 1 MHz
j
= 150 C
300
300
300
150
1.1
MIN.
100
50
100
100
90
250
380
320
160
1.1
25
PBSS4250X
Product specification
MAX.
nA
nA
nA
mV
mV
mV
mV
m
V
V
MHz
pF
A
UNIT