PBSS4250X Philips Semiconductors, PBSS4250X Datasheet - Page 2

• Manufacturer Part Number: PBSS4250X
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN low V
PNP complement: PBSS5250X.
MARKING
Note
1. * = p: Made in Hong Kong
ORDERING INFORMATION
2004 Nov 08
PBSS5250X
PBSS4250X
TYPE NUMBER
SOT89 (SC-62) package
Low collector-emitter saturation voltage V
High collector current capability: I
Higher efficiency leading to less heat generation
Reduced printed-circuit board requirements.
Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
– Inductive load driver (e.g. relays,
50 V, 2 A
NPN low V
* = t: Made in Malaysia
* = W: Made in China.
and LEDs).
buzzers and motors).
TYPE NUMBER
CEsat
transistor in a SOT89 plastic package.
CEsat
NAME
SC-62
(BISS) transistor
*1M
MARKING CODE
C
and I
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
CM
CEsat
(1)
2
QUICK REFERENCE DATA
PINNING
DESCRIPTION
SYMBOL
V
I
I
R
C
CM
CEO
CEsat
PACKAGE
PIN
1
2
3
Fig.1 Simplified outline (SOT89) and symbol.
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
emitter
collector
base
3
PARAMETER
2
1
DESCRIPTION
Product specification
PBSS4250X
3
sym042
50
2
5
160
2
1
MAX. UNIT
VERSION
SOT89
m
V
A
A