PBSS4250X Philips Semiconductors, PBSS4250X Datasheet - Page 3

• Manufacturer Part Number: PBSS4250X
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm
4. Device mounted on a ceramic printed-circuit board 7 cm
2004 Nov 08
V
V
V
I
I
I
P
T
T
T
R
R
SYMBOL
SYMBOL
C
CM
B
stg
j
amb
CBO
CEO
EBO
tot
th(j-a)
th(j-s)
50 V, 2 A
NPN low V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
ambient temperature
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CEsat
PARAMETER
(BISS) transistor
PARAMETER
open emitter
open base
open collector
limited by T
T
amb
note 1
note 2
3
25 C
2
, single-sided copper, tin-plated.
CONDITIONS
j(max)
in free air
CONDITIONS
note 1
note 2
note 3
note 4
65
65
MIN.
VALUE
225
125
90
80
16
50
50
5
2
5
0.5
550
1
+150
150
+150
PBSS4250X
Product specification
MAX.
UNIT
K/W
K/W
K/W
K/W
K/W
V
V
V
A
A
A
mW
W
C
C
C
UNIT
2
2
2
.
.
.