PBSS4160V Philips Semiconductors, PBSS4160V Datasheet - Page 5

• Manufacturer Part Number: PBSS4160V
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
7. Characteristics
9397 750 14359
Product data sheet
Table 7:
T
[1]
Symbol Parameter
I
I
I
h
V
V
R
V
t
t
t
t
t
t
f
C
CBO
CES
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25 C unless otherwise specified.
collector-base
cut-off current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
equivalent
on-resistance
base-emitter
turn-on voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency I
collector
capacitance
Characteristics
p
300 s;
Rev. 02 — 31 January 2005
0.02.
Conditions
V
V
T
V
V
V
V
V
I
I
I
I
I
V
V
I
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
Bon
C
j
CB
CB
CE
EB
CE
CE
CE
CE
CC
CB
= 150 C
= 100 mA; I
= 500 mA; I
= 1 A; I
= 1 A; I
= 1 A; I
= 50 mA; V
= 25 mA; I
= 60 V; I
= 60 V; I
= 60 V; V
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 10 V; I
= 10 V; I
B
B
B
= 100 mA
= 50 mA
= 100 mA
C
C
C
C
C
E
E
E
C
= 0 A
= 1 mA
= 500 mA
= 1 A
= 1 A
CE
BE
B
B
Boff
= 0 A
= 0 A;
= I
= 0.5 A;
= 1 mA
= 50 mA
= 0 V
= 10 V;
e
= 25 mA
60 V, 1 A NPN low V
= 0 A;
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
[1]
[1]
[1]
[1]
Min
-
-
-
-
250
200
100
-
-
-
-
-
-
-
-
-
-
-
-
150
-
PBSS4160V
CEsat
Typ
-
-
-
-
400
350
150
90
110
200
0.95
200
0.82
11
78
90
340
160
500
220
5.5
(BISS) transistor
Max
100
50
100
100
-
-
-
110
140
250
1.1
250
0.9
-
-
-
-
-
-
-
10
Unit
nA
nA
nA
mV
mV
mV
V
m
V
ns
ns
ns
ns
ns
ns
MHz
pF
A
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