PBSS4160V Philips Semiconductors, PBSS4160V Datasheet - Page 3

• Manufacturer Part Number: PBSS4160V
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
5. Limiting values
9397 750 14359
Product data sheet
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Symbol
V
V
V
I
I
I
I
P
T
T
T
C
CM
B
BM
Fig 1. Power derating curves
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm
(1) FR4 PCB; 1 cm
(2) FR4 PCB; standard footprint.
Limiting values
Parameter
collector-base voltage open emitter
collector-emitter
voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
total power dissipation T
junction temperature
ambient temperature
storage temperature
2
P
(W)
Rev. 02 — 31 January 2005
collector mounting pad.
tot
0.6
0.4
0.2
0
0
Conditions
open base
open collector
t = 1 ms or limited by
T
t
p
j(max)
amb
40
300 s;
(2)
(1)
25 C
80
60 V, 1 A NPN low V
0.02
120
T
amb
001aaa714
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
( C)
[1]
[2]
[1]
[2]
2
collector mounting pad.
160
Min
-
-
-
-
-
-
-
-
-
-
PBSS4160V
65
65
CEsat
(BISS) transistor
Max
80
60
5
0.9
1
2
300
1
300
500
150
+150
+150
Unit
V
V
V
A
A
mA
A
mW
mW
C
C
C
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