PBSS304NX NXP Semiconductors, PBSS304NX Datasheet - Page 6
PBSS304NX
Manufacturer Part Number
PBSS304NX
Description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor
Manufacturer
NXP Semiconductors
Datasheet
1.PBSS304NX.pdf
(15 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS304NX
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
PBSS304NXЈ¬115
Manufacturer:
NXP
Quantity:
4 000
w w w . D a t a S h e e t 4 U . c o m
NXP Semiconductors
7. Characteristics
PBSS304NX_2
Product data sheet
Table 7.
T
[1]
Symbol
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25
°
C unless otherwise specified.
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter saturation
voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
Characteristics
p
≤ 300 μs; δ ≤ 0.02.
Rev. 02 — 20 November 2009
Conditions
V
V
T
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
V
V
I
I
V
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
C
C
C
C
C
C
C
Bon
Boff
j
CB
CB
EB
CE
CE
CE
CE
CE
CE
CC
CE
CB
= 150 °C
= 0.5 A; I
= 1 A; I
= 1 A; I
= 2 A; I
= 4 A; I
= 4 A; I
= 4 A; I
= 4.7 A; I
= 4 A; I
= 4 A; I
= 1 A; I
= 4 A; I
= 0.15 A;
= −0.15 A
= 5 V; I
= 60 V; I
= 60 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
= 10 V; I
= 12.5 V; I
B
B
B
B
B
B
B
B
B
B
60 V, 4.7 A NPN low V
= 50 mA
= 10 mA
= 40 mA
= 200 mA
= 400 mA
= 80 mA
= 200 mA
= 80 mA
= 100 mA
= 400 mA
C
C
C
C
C
C
B
B
C
E
E
C
E
= 0 A
= 50 mA
= 235 mA
= 0.5 A
= 1 A
= 2 A
= 4 A
= 6 A
= 2 A
= 0 A
= 0 A;
= i
= 100 mA;
C
= 3 A;
e
= 0 A;
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
300
300
250
150
75
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PBSS304NX
CEsat
Typ
-
-
-
520
500
470
250
115
25
50
85
105
145
140
190
170
37
48
0.82
0.94
0.75
15
95
110
360
195
555
130
48
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
100
50
100
-
-
-
-
-
35
70
120
150
210
200
290
245
53
73
0.9
1.05
0.85
-
-
-
-
-
-
-
70
Unit
nA
μA
nA
mV
mV
mV
mV
mV
mV
mV
mV
mΩ
mΩ
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
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