PBSS303PD Philips Semiconductors, PBSS303PD Datasheet - Page 7

• Manufacturer Part Number: PBSS303PD
• Description: 3 A PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
7. Characteristics
PBSS303PD_1
Product data sheet
Table 7.
T
Symbol Parameter
I
I
I
h
V
R
V
V
CBO
CES
EBO
amb
FE
CEsat
BEsat
BEon
CEsat
= 25 C unless otherwise specified.
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
Characteristics
Rev. 01 — 31 May 2006
Conditions
V
V
T
V
V
V
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
I
V
C
C
C
C
C
C
C
C
C
C
C
C
C
C
j
CB
CB
CE
EB
CE
CE
CE
CE
CE
CE
CE
CE
= 150 C
= 500 mA; I
= 1 A; I
= 2 A; I
= 3 A; I
= 3 A; I
= 4 A; I
= 5 A; I
= 6 A; I
= 2 A; I
= 500 mA; I
= 1 A; I
= 1 A; I
= 3 A; I
= 3 A; I
= 60 V; I
= 60 V; I
= 48 V; V
= 5 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
B
B
B
B
B
B
B
B
B
B
B
B
C
= 50 mA
= 200 mA
= 150 mA
= 300 mA
= 400 mA
= 500 mA
= 600 mA
= 200 mA
= 50 mA
= 100 mA
= 150 mA
= 300 mA
C
C
C
C
C
C
C
C
E
E
= 0 A
= 500 mA
= 1 A
= 2 A
= 3 A
= 4 A
= 5 A
= 6 A
= 2 A
BE
B
B
= 0 A
= 0 A;
60 V, 3 A PNP low V
= 50 mA
= 50 mA
= 0 V
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Min
-
-
-
-
180
160
130
95
60
35
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PBSS303PD
CEsat
Typ
-
-
-
-
265
235
185
135
80
50
30
75
55
100
150
275
210
285
375
515
0.78
0.80
0.83
0.92
0.94
0.80
(BISS) transistor
www.DataSheet4U.com
Max
-
-
-
-
-
-
-
100
100
50
100
100
70
135
200
365
290
385
495
675
0.87
0.89
0.92
0.99
1.02
1.00
7 of 16
Unit
nA
nA
nA
mV
mV
mV
mV
mV
mV
mV
mV
m
V
V
V
V
V
V
A