PBSS303PD Philips Semiconductors, PBSS303PD Datasheet - Page 6

• Manufacturer Part Number: PBSS303PD
• Description: 3 A PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
PBSS303PD_1
Product data sheet
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
10
1
1
3
2
1
3
2
1
10
10
FR4 PCB, mounting pad for collector 6 cm
Ceramic PCB, Al
5
5
duty cycle =
duty cycle =
0.05
0.02
0.01
0.05
0.02
0.01
0.5
0.2
0.1
0.5
0.2
0.1
1
0
1
0
0.75
0.33
0.75
0.33
10
10
2
4
4
O
3
, standard footprint
10
10
3
3
2
10
10
2
2
Rev. 01 — 31 May 2006
10
10
1
1
1
1
60 V, 3 A PNP low V
10
10
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
PBSS303PD
CEsat
10
10
2
2
(BISS) transistor
t
t
p
p
006aaa273
006aaa751
www.DataSheet4U.com
(s)
(s)
10
10
3
3
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