PBSS303PD Philips Semiconductors, PBSS303PD Datasheet - Page 3

• Manufacturer Part Number: PBSS303PD
• Description: 3 A PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
5. Limiting values
PBSS303PD_1
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
Symbol
V
V
V
I
I
I
I
P
T
T
T
C
CM
B
BM
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on a ceramic PCB, Al
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Pulse test: t
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
p
10 ms;
Rev. 01 — 31 May 2006
10 %.
2
O
3
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
, standard footprint.
p
p
amb
1 ms
1 ms
25 C
60 V, 3 A PNP low V
[1][5]
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
[1]
[2]
[1]
[3]
[4]
[2]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PBSS303PD
65
65
CEsat
(BISS) transistor
Max
360
600
750
1.1
2.5
150
+150
+150
60
60
5
1
3
6
800
2
www.DataSheet4U.com
Unit
V
V
V
A
A
A
mA
A
mW
mW
mW
W
W
2
2
C
C
C
.
.
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