CR08AS Mitsubishi Electric Semiconductor, CR08AS Datasheet - Page 4

• Manufacturer Part Number: CR08AS
• Description: LOW POWER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

160
140
120
100
160
140
120
100
160
140
120
100
ALLOWABLE AMBIENT TEMPERATURE VS.
ALLOWABLE AMBIENT TEMPERATURE VS.
ALLOWABLE AMBIENT TEMPERATURE VS.
80
60
40
20
80
60
40
20
80
60
40
20
0
0
0
0
0
0
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
R
25 25 t0.7
ALUMINUM BOARD
WITH SOLDERING
25 25 t0.7
ALUMINUM BOARD
WITH SOLDERING
AVERAGE ON-STATE CURRENT
th(j – a)
AVERAGE ON-STATE CURRENT
AVERAGE ON-STATE CURRENT
0.1
0.2
0.2
(SINGLE-PHASE HALF WAVE)
(SINGLE-PHASE FULL WAVE)
= 30°
(RECTANGULAR WAVE)
0.2
0.4
0.4
= 30°
= 200°C/W
RESISTIVE,
INDUCTIVE
LOADS
60°
NATURAL
0.3
0.6
90°
0.6
60°
120°
CONVECTION
90°
0.4
0.8
0.8
180°
RESISTIVE LOADS
NATURAL
CONVECTION
90°C/W
120°
270°
0.5
1.0
1.0
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
180°
360°
360°
0.6 0.7
1.2 1.4
1.2 1.4
65°C/W
360°
DC
= 180°
0.8
1.6
1.6
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR THYRISTOR
160
140
120
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
MAXIMUM AVERAGE POWER DISSIPATION
MAXIMUM AVERAGE POWER DISSIPATION
80
60
40
20
0
0
0
–40
0
0
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
TYPICAL EXAMPLE
–20
JUNCTION TEMPERATURE (°C)
0.2
0.2
(SINGLE-PHASE FULL WAVE)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
(RECTANGULAR WAVE)
0
0.4
0.4
= 30° 60° 120°
20
= 30° 60°
0.6
0.6
40
0.8
0.8
60
90° 180°
RESISTIVE LOADS
80
90°
1.0
1.0
R
GK
RESISTIVE,
INDUCTIVE
LOADS
270°
100
120°
360°
LOW POWER USE
180°
1.2 1.4
1.2 1.4
= 1k
DC
120 140
360°
CR08AS
160
1.6
1.6
Feb.1999