CR08AS Mitsubishi Electric Semiconductor, CR08AS Datasheet - Page 2

• Manufacturer Part Number: CR08AS
• Description: LOW POWER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
DC
I
I
V
V
V
I
I
R
3V
2. Soldering with ceramic plate (25mm
3. If special values of I
RRM
DRM
GT
H
TM
GT
GD
th (j-a)
Symbol
4. I
The above values do not include the current flowing through the 1k
GT
I
GT
SWITCH 1 : I
SWITCH 2 : V
(Inner resistance of voltage meter is about 1k )
Item
, V
( A)
GT
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
measurement circuit.
10
10
10
10
SWITCH
MAXIMUM ON-STATE CHARACTERISTICS
–1
I
7
5
3
2
7
5
3
2
7
5
3
2
A3
R
1k
2
1
0
GS
GT
0
GK
GT
GT
are required, choose at least two items from those listed in the table below. (Example: AB, BC)
1 ~ 30
T
measurement
Parameter
A
a
measurement
1
= 25°C
I
A2
GT
ON-STATE VOLTAGE (V)
1
2
V1
V
GT
25mm
2
20 ~ 50
TUT
B
A1
t0.7).
3
T
T
T
T
T
T
T
Junction to ambient
60
j
j
a
a
j
j
j
=125 C, V
=125 C, V
=125 C, V
=25 C, V
=25 C, V
=25 C, I
=25 C, V
DC
40 ~ 100
6V
4
C
TM
D
D
D
RRM
DRM
D
=6V, I
=12V, R
=6V, I
=2.5A, instantaneous value
=1/2V
5
resistance between the gate and cathode.
applied, R
applied, R
T
T
=0.1A
DRM
=0.1A
GK
2
=1k
, R
Test conditions
GK
4
GK
GK
4
=1k
=1k
=1k
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR THYRISTOR
10
9
8
7
6
5
4
3
2
1
0
10
RATED SURGE ON-STATE CURRENT
0
2 3
CONDUCTION TIME
(CYCLES AT 60Hz)
4
5 7 10
Min.
1
0.2
—
—
—
—
—
—
1
2 3
LOW POWER USE
Limits
Typ.
1.5
—
—
—
—
—
—
—
4
5 7 10
CR08AS
Max.
100
0.5
0.5
1.5
0.8
—
65
3
2
3
Feb.1999
Unit
mA
mA
mA
C/W
V
V
V
A