CR08AS Mitsubishi Electric Semiconductor, CR08AS Datasheet - Page 3

• Manufacturer Part Number: CR08AS
• Description: LOW POWER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

10
10
10
10
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
MAXIMUM AVERAGE POWER DISSIPATION
–1
–2
0
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
–40 –20
2
1
0
10
0
–2
AVERAGE ON-STATE CURRENT (A)
V
2 3 57
V
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
0.2
GD
(SINGLE-PHASE HALF WAVE)
FGM
V
JUNCTION TEMPERATURE
P
GT
GATE CHARACTERISTICS
RESISTIVE, INDUCTIVE LOADS
G(AV)
= 0.2V
10
GATE CURRENT (mA)
0.4
= 6V
= 0.8V
= 30° 60°
0
–1
2 3 57
I
(T
= 0.1W
DISTRIBUTION
GT
0.6
20
j
= 25°C)
= 100µA
10
0.8
TYPICAL EXAMPLE
90°
40
0
2 3 57
120°
1.0
60
180°
I
10
FGM
P
360°
1
GM
1.2 1.4
80
2 3 57
= 0.3A
= 0.5W
100
10
2
2 3
120
1.6
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR THYRISTOR
160
140
120
100
10
10
10
10
10
10
10
10
ALLOWABLE AMBIENT TEMPERATURE VS.
80
60
40
20
10
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
–40
3
2
1
0
3
2
1
0
10
0
–3
AVERAGE ON-STATE CURRENT (A)
25 25 t0.7
ALUMINUM BOARD
WITH SOLDERING
TYPICAL EXAMPLE
25 25 t0.7
ALUMINUM BOARD
WITH SOLDERING
0
MAXIMUM TRANSIENT THERMAL
–20
IMPEDANCE CHARACTERISTICS
AVERAGE ON-STATE CURRENT
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT VS.
2 3
2 3
0.2
(SINGLE-PHASE HALF WAVE)
= 30°
JUNCTION TEMPERATURE
(JUNCTION TO AMBIENT)
0 20 40
5 7 10
5 710
0.4
60° 120°
90° 180°
0.6
–2
1
TIME (s)
2 3 5 7 10
2 3 5 710
0.8
60
80 100 120 140
1.0
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
360°
–1
2
LOW POWER USE
1.2 1.4
2 3 5 7 10
2 3 5 7 10
CR08AS
160
1.6
3
0
Feb.1999