CR08AS Mitsubishi Electric Semiconductor, CR08AS Datasheet - Page 3
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CR08AS
Manufacturer Part Number
CR08AS
Description
LOW POWER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE
Manufacturer
Mitsubishi Electric Semiconductor
Datasheet
1.CR08AS.pdf
(6 pages)
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10
10
10
10
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
MAXIMUM AVERAGE POWER DISSIPATION
–1
–2
0
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
–40 –20
2
1
0
10
0
–2
AVERAGE ON-STATE CURRENT (A)
V
2 3 57
V
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
0.2
GD
(SINGLE-PHASE HALF WAVE)
FGM
V
JUNCTION TEMPERATURE
P
GT
GATE CHARACTERISTICS
RESISTIVE, INDUCTIVE LOADS
G(AV)
= 0.2V
10
GATE CURRENT (mA)
0.4
= 6V
= 0.8V
= 30° 60°
0
–1
2 3 57
I
(T
= 0.1W
DISTRIBUTION
GT
0.6
20
j
= 25°C)
= 100µA
10
0.8
TYPICAL EXAMPLE
90°
40
0
2 3 57
120°
1.0
60
180°
I
10
FGM
P
360°
1
GM
1.2 1.4
80
2 3 57
= 0.3A
= 0.5W
100
10
2
2 3
120
1.6
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR THYRISTOR
160
140
120
100
10
10
10
10
10
10
10
10
ALLOWABLE AMBIENT TEMPERATURE VS.
80
60
40
20
10
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
–40
3
2
1
0
3
2
1
0
10
0
–3
AVERAGE ON-STATE CURRENT (A)
25 25 t0.7
ALUMINUM BOARD
WITH SOLDERING
TYPICAL EXAMPLE
25 25 t0.7
ALUMINUM BOARD
WITH SOLDERING
0
MAXIMUM TRANSIENT THERMAL
–20
IMPEDANCE CHARACTERISTICS
AVERAGE ON-STATE CURRENT
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT VS.
2 3
2 3
0.2
(SINGLE-PHASE HALF WAVE)
= 30°
JUNCTION TEMPERATURE
(JUNCTION TO AMBIENT)
0 20 40
5 7 10
5 710
0.4
60° 120°
90° 180°
0.6
–2
1
TIME (s)
2 3 5 7 10
2 3 5 710
0.8
60
80 100 120 140
1.0
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
360°
–1
2
LOW POWER USE
1.2 1.4
2 3 5 7 10
2 3 5 7 10
CR08AS
160
1.6
3
0
Feb.1999