BFU630F NXP Semiconductors, BFU630F Datasheet - Page 6

• Manufacturer Part Number: BFU630F
• Description: NPN wideband silicon RF transistor
• Manufacturer: NXP Semiconductors

www.DataSheet.co.kr
NXP Semiconductors
BFU630F
Product data sheet
Fig 4.
Fig 6.
C
(fF)
CBS
(1) f = 1.5 GHz
(2) f = 1.8 GHz
(3) f = 2.4 GHz
(4) f = 5.8 GHz
80
60
40
20
0
0
f = 1 MHz, T
Collector-base capacitance as a function of
collector-base voltage; typical values
V
Gain as a function of collector current; typical value
CE
= 2 V; T
amb
amb
4
= 25 C.
= 25 C.
(dB)
8
G
30
20
10
0
V
0
All information provided in this document is subject to legal disclaimers.
CB
001aam815
(V)
MSG
Rev. 1 — 15 December 2010
10
12
20
(1)
(2)
(3)
(4)
Fig 5.
30
(GHz)
fT
30
20
10
0
G
0
p(max)
V
Transition frequency as a function of collector
current; typical values
40
CE
001aam817
I
C
= 2 V; f = 2 GHz; T
(mA)
50
NPN wideband silicon RF transistor
10
20
amb
= 25 C.
30
BFU630F
© NXP B.V. 2010. All rights reserved.
001aam816
I
C
(mA)
40
6 of 12
Datasheet pdf - http://www.DataSheet4U.net/