BFU610F Philips Semiconductors, BFU610F Datasheet - Page 6
BFU610F
Manufacturer Part Number
BFU610F
Description
NPN Wideband Silicon Germanium RF Transistor
Manufacturer
Philips Semiconductors
Datasheet
1.BFU610F.pdf
(12 pages)
NXP Semiconductors
8. Package outline
Fig 2.
BFU610F
Objective data sheet
Plastic surface-mounted flat pack package; reverse pinning; 4 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT343F
Package outline SOT343F (DFP4)
max
0.75
0.65
A
0.4
0.3
b
w
p
M
A
0.7
0.5
b
1
3
2
IEC
b
0.25
0.10
p
c
y
2.2
1.8
D
e
D
1
e
1.35
1.15
JEDEC
E
All information provided in this document is subject to legal disclaimers.
b
1
REFERENCES
1.3
e
0
4
1
Rev. 01 — 17 June 2010
1.15
e
1
A
w
JEITA
2.2
2.0
H
M
E
scale
A
1
0.48
0.38
L
p
NPN wideband silicon germanium RF transistor
0.2
w
2 mm
0.1
y
A
detail X
H
PROJECTION
E
EUROPEAN
E
L
p
c
BFU610F
© NXP B.V. 2010. All rights reserved.
w
X
ISSUE DATE
05-07-12
06-03-16
w
SOT343F
w
6 of 12
.
D
a
t