BFU610F Philips Semiconductors, BFU610F Datasheet
BFU610F
Related parts for BFU610F
BFU610F Summary of contents
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... BFU610F NPN wideband silicon germanium RF transistor Rev. 01 — 17 June 2010 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. 1.2 Features and benefits 40 GHz f technology High associated gain GHz 1 ...
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... Plastic surface-mounted flat pack package; 4 leads Marking code D1 Conditions ≤ 90 °C; see T Figure 1 sp All information provided in this document is subject to legal disclaimers. Rev. 01 — 17 June 2010 www.DataSheet4U.com BFU610F Graphic symbol sym123 Version SOT343F Min Typ Max Unit - - ...
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... Power derating curve BFU610F Objective data sheet NPN wideband silicon germanium RF transistor 200 P tot 150 100 120 All information provided in this document is subject to legal disclaimers. Rev. 01 — 17 June 2010 www.DataSheet4U.com BFU610F 001aah424 160 T (°C) sp © NXP B.V. 2010. All rights reserved ...
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... BFU610F Objective data sheet NPN wideband silicon germanium RF transistor Conditions All information provided in this document is subject to legal disclaimers. Rev. 01 — 17 June 2010 www.DataSheet4U.com BFU610F Min Typ Max Unit - 440 - K/W © NXP B.V. 2010. All rights reserved. ...
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... 5.8 GHz mA Ω Ω MSG. p(max) All information provided in this document is subject to legal disclaimers. Rev. 01 — 17 June 2010 BFU610F Min Typ Max Unit 100 nA ...
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... 1.35 2.2 0.48 1.3 1.15 0.2 1.15 2.0 0.38 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 01 — 17 June 2010 w w BFU610F detail 0.1 EUROPEAN ISSUE DATE PROJECTION 05-07-12 06-03-16 © NXP B.V. 2010. All rights reserved SOT343F ...
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... Objective data sheet NPN wideband silicon germanium RF transistor 2.7 2.5 0.57 0.7 0.8 1.85 All information provided in this document is subject to legal disclaimers. Rev. 01 — 17 June 2010 www.DataSheet4U.com BFU610F SOT343F solder lands solder resist solder paste occupied area Dimensions in mm sot343f_fr © NXP B.V. 2010. All rights reserved ...
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... Objective data sheet NPN wideband silicon germanium RF transistor 2.3 3 2.575 1 All information provided in this document is subject to legal disclaimers. Rev. 01 — 17 June 2010 www.DataSheet4U.com BFU610F solder lands solder resist occupied area 1.75 Dimensions in mm preferred transport direction during soldering sot343f_fw © NXP B.V. 2010. All rights reserved. ...
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... NXP Semiconductors 10. Revision history Table 8. Revision history Document ID Release date BFU610F v.1 20100617 BFU610F Objective data sheet NPN wideband silicon germanium RF transistor Data sheet status Change notice Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 01 — 17 June 2010 www ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 01 — 17 June 2010 www.DataSheet4U.com BFU610F © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — 17 June 2010 www.DataSheet4U.com BFU610F © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com www.DataSheet4U.com BFU610F All rights reserved. Date of release: 17 June 2010 Document identifier: BFU610F ...