BFU610F Philips Semiconductors, BFU610F Datasheet - Page 2

• Manufacturer Part Number: BFU610F
• Description: NPN Wideband Silicon Germanium RF Transistor
• Manufacturer: Philips Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Marking
Table 4.
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BFU610F
Objective data sheet
Pin
1
2
3
4
Type number
BFU610F
Type number
BFU610F
Symbol
V
V
V
I
P
T
T
C
stg
j
CBO
CEO
EBO
tot
T
sp
is the temperature at the solder point of the emitter lead.
Symbol Description
E
B
E
C
Pinning information
Ordering information
Marking codes
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
emitter
base
emitter
collector
Package
Name
DFP4
Description
Plastic surface-mounted flat pack package; 4 leads
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 17 June 2010
Conditions
I
I
I
T
Simplified outline
E
B
C
sp
= 0 A
= 0 A
= 0 A
≤ 90 °C; see
SOT343F (DFP4)
Marking code
D1
3
2
NPN wideband silicon germanium RF transistor
Figure 1
1
4
Graphic symbol
[1]
-65
Min
-
-
-
-
-
-
B
Typ
-
-
-
-
-
-
-
sym123
BFU610F
© NXP B.V. 2010. All rights reserved.
www.DataSheet4U.com
C
E
Version
SOT343F
Max
10
5
0.55
10
50
150
150
Unit
V
V
V
mA
mW
°C
°C
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