3SK300 Hitachi Semiconductor, 3SK300 Datasheet - Page 6

• Manufacturer Part Number: 3SK300
• Description: Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
• Manufacturer: Hitachi Semiconductor

3SK300
6
0
5
4
3
2
1
3
5
4
2
1
0
Noise Figure vs. Drain to Source Voltage
Noise Figure vs. Drain Current
Drain to source voltage V
4
2
Drain current I
8
4
12
D
6
(mA)
V
V
f = 900MHz
V
I
f = 200MHz
D
DS
G2S
G2S
= 10mA
DS
= 6V
16
= 3V
= 3V
8
(V)
20
10
20
16
12
20
16
12
8
4
8
4
0
0
Power Gain vs. Drain to Source Voltage
Drain to source voltage V
Power Gain vs. Drain Current
2
4
Drain current I
4
8
D
12
6
(mA)
V
I
f = 900MHz
D
V
V
f = 900MHz
G2S
= 10mA
DS
G2S
DS
= 6V
16
= 3V
8
= 3V
(V)
10
20